Electron Devices

EC25C01

Electron Devices

Course Objective:

• To acquaint with the construction, theory and operation of the basic electronic devices such as PN junction diode, Bipolar and Field Effect Transistors, Power control devices, LED, LCD and other Optoelectronic devices.

Semiconductor: Types, Conductivity, Electron energy levels and energy band diagram, Carrier concentration, Mass action law, Characteristics and behavior of intrinsic semiconductors, Variation in properties with temperature, Carrier drift and diffusion, Current density equation, Excess carrier generation and recombination rates, Carrier life time. Continuity equation.

Activity: Virtual demonstration of energy levels, Drift and diffusion current.

PN Junction Diodes: Energy band diagram of open-circuited PN junction, Forward and reverse bias characteristics, Diode resistance, Transition and diffusion capacitance, Effect of temperature on diode behavior, clipper, clamper-Applications of PN junction diodes.

Special Diodes: Zener diode – breakdown mechanisms and voltage regulation, Varactor diode, Tunnel diode, Photo diode – construction, operation, and applications.

Activities: Virtual demonstration of characteristics of junction diodes, Design of a constant voltage regulator using Zener Diode.

Bipolar Junction Transistors: Construction, working, characteristics in CB, CE, and CC configurations, regions of operation, current gain, input/output characteristics, Early effect. Other Devices: Multi-emitter transistor – construction and applications.

Field Effect Transistors: JFET – construction, working, characteristics, parameters. MOSFET, MOS capacitor, depletion and enhancement modes, nMOS and pMOS, threshold voltage, transfer and output characteristics. CMOS – introduction and basic operation.

Thyristors: Shockley diode, Silicon Controlled Rectifier (SCR), TRIAC and DIAC – operation and applications, Thyristor protection techniques.

Unijunction Transistor (UJT): Construction, characteristics and application as relaxation oscillator.

Optoelectronic Devices: LED, LCD, Photo transistor, Opto-coupler – principle, characteristics and applications. Power MOSFETs: Construction, switching characteristics and applications in power circuits.

Weightage: Continuous Assessment: 50%, End Semester Examinations: 50%

Assessment Methodology: Quiz (15%), Assignments (30%), Flipped Class (5%), GATE Questions 10 % Internal Examinations (40%)

References:

1. Neamen, D. A. (2012). Semiconductor physics and devices. Tata McGraw-Hill.

2. Boylestad, R. L., & Nashelsky, L. (2008). Electronic devices and circuit theory. Pearson Prentice Hall.

3. Yang, C. Y. (1978). Fundamentals of semiconductor devices. McGraw-Hill International.

4. Salivahanan, S., Suresh Kumar, N., & Vallavaraj, A. (2008). Electronic devices and circuits. Tata McGraw-Hill.

5. Floyd, T. L. (2018). Electronic Devices: Conventional Current Version. Pearson.

E-Resources:

1. https://archive.nptel.ac.in/courses/108/108/108108122/

2. https://onlinecourses.nptel.ac.in/noc21_ee80/preview

3. Razavi Electronics 1, Lec 1, Intro., Charge Carriers, Doping

4. Semiconductor Devices: Fundamentals