Electron Devices: Chapter 4: Bipolar Junction Transistors

Bipolar Junction Transistors (BJT): Important Example Solved Problems

Electron Devices

Electron Devices: Chapter 4: Bipolar Junction Transistors : Anna University Solved Problems, Assignment Problems and Important Solved Problems

Electron Devices

Chapter 4: Bipolar Junction Transistors


Important Example Solved Problems


Common Base Transistor Configuration


Ex. 1: Given IE = 2.5 mA, α = 0.98 and ICBO = 10 μA calculate IB and Ic.

Solution:

IC = αIE + ICBO

= 0.98 × 2.5 × 10‒3 + 10×10‒6 = 2.46 mA

IB  = IE‒IC = 2.5×103 − 2.46×10−3 = 40 μA

 

Common Emitter Transistor Configuration


Ex. 2: Calculate the collector and emitter current levels for a BJT with αdc = 0.99 and IB = 20 μA

Solution: :

Bdc = αdc / (1 ‒ αdc)

= 0.99 / (1‒0.99)

= 99

IC = βdc IB = 99×20 μA = 1.98 mA

IE = IC+IB = 1.98 mA + 20 μA = 2 mА

 

Ex. 3: Calculate the values of IC and IE for a BJT with αdc = 0.97 and IB = 50 μA. Determine βdc for the device.

Solution: :

Bdc = αdc / (1 ‒ αdc)

= 0.97 / (1‒0.97)

= 32.33

IC = βdc IB = 32.33 × 50 μA = 1.6165 mA

IE = IB + IC = 50 μA + 1.6165 mA

= 1.6665 mA



ICEO

From equation (4.4.4) we have,

IC = (αdc / 1‒αdc )IB + (ICBO / 1‒αdc )

IC = βdcIB + (1+βdc)ICBO

            ………….(4.4.5)

Since

1+ βdc = 1 + (αdc / 1‒αdc)

 = [ 1 ‒αdc + αdc ] / [ 1‒αdc ]

= 1 / ( 1‒αdc )

The terms (1 + βdc) ICBO in equation (4.4.5) is denoted as ICEO and is the reverse saturation current for the CE configuration.

     (1+βdc)ICBO = ICEO

 IC = βdcIB + ICEO

 

Ex. 4: The reverse leakage current of the transistor when connected in CB configuration is 0.2 μA and it is 18 μA when same transistor is connected in CE configuration. Calculate αdc and βdc of the transistor. (Assume IB = 30 mA)

Solution:

Given: ICBO = 0.2 μA, ICEO = 18 μA

 ICEO = (1 + βdc)ICBO

 (1 + βdc) = ICEO / ICEO = 18 μA / 0.2 μA = 90

βdc = 89

αdc = βdc / (1 + βdc)

=  89 / (1+89) = 0.989

 

Ex. 5: Calculate the αdc and βac for the given transistor for which IC=5 mA, IB =50 μA and ICO = 1 μΑ.

Solution:

 IC=5mA, IB = 50 μA, ICO =ICBO = 1 μA

IC = βdcIB +(1+βdc)ICBO

 5×10‒3 = βdc × 50×10−6 + (1+βdc)×1×10‒6

5×10‒3 ‒ 1×10‒6 = 51×10‒6 βdc

 βdc = 4.999×10‒3 / 51×10‒6 = 98

 αdc = βdc / (1+ βdc) = 98 / (1+98) = 0.9899

 

Ex. 6: A transistor has β = 150, find the collector and base current, if IE = 10 mA.

Solution:

 IB = IE / (1+β) =  10mA / (1+150) = 66.225 μA

 IC = βIB = 150×66225 μA = 9.934 mA

 

Ex. 7: A transistor with IB = 100 μA and IC = 2 mA find

1) β of the transistor

2) α of the transistor

3) Emitter current IE

4) If IB changes by 25μA and IC changes by 0.6 mA. Find the new value of β.

Solution: :

1) β = IC/IB

= 2×10‒3 / 100×10‒6

= 20

2) α = β / (1+β)

 = 20 / (1+20) = 0.9524

3) IE = IB + IC = 100×10‒6 + 2×10‒3 = 2.1 mA

4) New value of IB = 100 + 25 = 125 mA

New value of IC = 2 + 0.6 = 2.6 mA

New value of β = 2.6×10‒3 / 125×10‒6

= 20.8


Electron Devices: Chapter 4: Bipolar Junction Transistors : Tag: electronics : Electron Devices - Bipolar Junction Transistors (BJT): Important Example Solved Problems


Electron Devices: Chapter 4: Bipolar Junction Transistors



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