
When impurities are added, allowable energy levels are introduced.
Energy
Band Diagram for Extrinsic Semiconductors
•
When impurities are added, allowable energy levels are introduced.
•
In n‒type material, each donor atom donates one free electron and hence donor
energy level is introduced just below the conduction band denoted as ED.
•
This is so close to the conduction band that even at room temperature, almost
all the added electrons jump into conduction band.
•
Thus probability of occupying energy level by an electron is very high near conduction
band. Hence fermi level EF shifts towards conduction band in n‒type
material.
•
While in p‒type material each acceptor atom creates hole in the valence band.
•
This introduces accpetor energy level very close to valence band but just above
it. It is denoted as EA

•
At room temperature, electrons from valence band jump to acceptor energy level
creating holes in the valence band. This shifts the fermi level EF
towards valence band in p‒type material.
•
The energy band diagrams for n and p‒type materials is shown in Fig. 1.10.1.
Electron Devices: Chapter 1: Semiconductor : Tag: electronics : - Energy Band Diagram for Extrinsic Semiconductors
Electron Devices
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