Electron Devices: Chapter 5: Field Effect Transistors

MOS Capacitor

Home | Department: ECE Department | Ist Year | Subject: Electron Devices |

Question: Write a note on MOS capacitor.

MOS Capacitor

• In the integrated circuit environment a thin‒flim technique is used to obtain capacitors. Fig. 5.20.1 (a) shows a structure of metal‒oxide‒semiconductor (MOS) polarized capacitor. As shown in Fig. 5.20.1 (a) there are two parallel plates (top plate and bottom plate) and SiO₂ as the dielectric between them.

• A thin film layer of aluminum metal form the top plate and the bottom plate consists of the heavily doped n⁺ region which is formed during the emitter diffusion. This capacitance varies inversely with the thickness. A typical value for capcitance is 0.4 pF/mil² for an oxide thickness of 500 Å

• The equivalent circuit of the MOS capacitor is shown in Fig. 5.20.1 (b). Here the C₁ denotes the parasitic capacitance J₁ of the collector substrate junction and R is the small series resistance of the n region.

Review Question

1. Write a note on MOS capacitor.

Electron Devices: Chapter 5: Field Effect Transistors : Tag: electronics : - MOS Capacitor

Home | Department: ECE Department | Ist Year | Subject: Electron Devices |

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Electron Devices: Chapter 5: Field Effect Transistors

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